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| Final data SPW20N60C3 VDS @ Tjmax RDS(on) ID 650 0.19 20.7 P-TO247 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance V A Type SPW20N60C3 Package P-TO247 Ordering Code Q67040-S4406 Marking 20N60C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 C TC = 100 C A 20.7 13.1 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 62.1 690 1 20 6 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt IS=20.7A, VDS=480V, T j=125C A V/ns V W C 2003-09-17 Gate source voltage static VGS VGS Ptot T j , T stg Page 1 Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature 208 -55... +150 Final data SPW20N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. RthJC RthJA Values typ. max. 0.6 62 K/W Unit Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=1000, VGS=VDS VDS=600V, VGS=0V, Tj=25C, Tj=150C Values typ. 700 3 0.5 0.16 0.43 0.54 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=20A A 25 250 100 0.19 nA Gate-source leakage current IGSS VGS=30V, VDS=0V VGS=10V, ID=13.1A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-09-17 Final data SPW20N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=13.1A V GS=0V, V DS=25V, f=1MHz Values typ. 17.5 2400 780 50 83 160 10 max. - Unit S pF Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time V GS=0V, V DS=0V to 480V pF td(on) V DD=380V, V GS=0/13V, ID=20.7A, R G=3.6, Tj=125 - ns Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage tr td(off) tf V DD=380V, V GS=0/13V, ID=20.7A, R G=3.6 - 5 67 4.5 100 12 Qgs Qgd Qg VDD=480V, ID=20.7A - 11 33 87 5.5 114 - nC VDD=480V, ID=20.7A, VGS=0 to 10V V(plateau) VDD=480V, ID=20.7A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-09-17 Final data SPW20N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=480V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 500 11 70 1400 max. 20.7 62.1 1.2 800 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.00769 0.015 0.029 0.114 0.136 0.059 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-09-17 Final data SPW20N60C3 1 Power dissipation Ptot = f (TC) 240 SPW20N60C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W 200 180 A 10 1 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 10 -1 10 0 ID 160 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 80 K/W A 20V 10V 8V 7V 10 -1 60 ZthJC ID 50 6,5V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 40 6V 30 5,5V 20 5V 10 10 -4 -7 10 4,5V 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 0 0 5 10 15 V VDS 25 Page 5 2003-09-17 Final data SPW20N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 45 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 1.5 A 20V 10V 7V 6V 1.3 35 30 25 20 RDS(on) 1.2 1.1 1 0.9 5.5V 5V 0.8 0.7 4V 4.5V 5V 5.5V 6V 6.5V 20V ID 15 10 5 0 0 4.5V 0.6 0.5 0.4 2 4 6 8 10 12 14 16 18 20 22 V 25 0.3 0 5 10 15 20 25 30 VDS 40 A ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V 1.1 SPW20N60C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 80 0.9 A 25C RDS(on) 0.8 60 ID 0.7 0.6 50 40 0.5 0.4 0.3 98% 0.2 0.1 0 -60 -20 20 60 100 C 150C 30 20 typ 10 180 0 0 1 2 3 4 5 6 7 Tj Page 6 9 V VGS 2003-09-17 Final data SPW20N60C3 9 Typ. gate charge VGS = f (QGate) 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPW20N60C3 parameter: ID = 20.7 A pulsed 16 V SPW20N60C3 A 12 VGS 0.2 VDS max 0.8 VDS max 10 1 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) nC 10 4 2 10 -1 0 0 0 20 40 60 80 100 140 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C 12 Typ. switching time t = f (RG), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, ID=20.7 A 10 3 par.: VDS=380V, VGS=0/+13V, ID=20.7A 5000 A/s ns 4000 3500 10 2 td(off) di/dt 3000 di/dt(on) t td(on) 2500 2000 10 1 1500 1000 500 0 0 10 0 0 di/dt(off) tr tf 15 20 25 30 5 10 RG 40 5 10 15 20 25 30 40 RG Page 7 2003-09-17 Final data SPW20N60C3 13 Typ. switching time t = f (ID), inductive load, T j=125C par.: VDS=380V, VGS=0/+13V, RG =3.6 10 2 14 Typ. drain source voltage slope dv/dt = f(RG), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=20.7A 150000 td(off) V/ns ns dv/dt(off) 10 1 tf td(on) dv/dt 100000 t 75000 50000 tr dv/dt(on) 25000 10 0 0 4 8 12 16 A ID 24 0 0 5 10 15 20 25 30 40 RG 15 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =3.6 0.08 16 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, ID=20.7A 0.4 mWs *) Eon includes SPD06S60 diode commutation losses mWs *) Eon includes SPD06S60 diode commutation losses 0.06 0.3 Eoff E Eoff 0.04 E 0.05 0.25 0.2 Eon* 0.03 Eon* 0.15 0.02 0.1 0.01 0.05 0 0 3 6 9 12 15 A ID 21 0 0 5 10 15 20 25 30 40 RG Page 8 2003-09-17 Final data SPW20N60C3 17 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 20 18 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V mJ 750 A 600 550 EAS Tj(Start)=25C IAR 500 450 400 350 300 250 10 5 Tj(Start)=125C 200 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 4 0 20 40 60 80 100 120 C 160 Tj 19 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW20N60C3 20 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 500 V W V(BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 5 6 PAR C 300 100 -20 20 60 100 180 10 Hz f 10 Tj Page 9 2003-09-17 Final data SPW20N60C3 21 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 22 Typ. Coss stored energy Eoss=f(VDS) 14 pF 10 4 J 12 Ciss 11 Eoss Coss Crss 10 9 8 7 10 3 C 10 2 6 5 4 10 1 3 2 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Definition of diodes switching characteristics Page 10 2003-09-17 Final data SPW20N60C3 P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 11 2003-09-17 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPW20N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-09-17 |
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